3:05 PM - 3:35 PM
[17p-E302-4] Highly Scalable c-axis crystalline In-Ga-Zn Oxide FETs and their applications
Keywords:Oxide Semiconductor, BEOL, display
We are developing c-axis aligned crystalline In-Ga-Zn Oxide FETs (OSFETs) to achieve higher integration in circuits. The OSFET can be fabricated in the Back-end-of-line process of the existing CMOS process because of its low-temperature process. Therefore, OSFETs have the potential to achieve miniaturization at low cost. OSFETs are widely used in displays, and are currently attracting attention as a device material for LSIs. In this presentation, I will introduce the possibilities of OSFETs, their miniaturization technology, and application examples. We hope that c-axis aligned crystalline In-Ga-Zn Oxide FETs, which will be discussed in this presentation, will be widely used as soon as possible and become the key to low power consumption in various areas.