[17p-PB02-1~8] 9.4 Thermoelectric conversion

[17p-PB02-5] First-principles calculation of the transverse thermoelectric effect in ultrathin films of magnetic semiconductor MnBi₂Te₄

〇Yume Morishima¹, Naoya Yamaguchi², Hikaru Sawahata², Fumiyuki Ishii² (1.Grad. Sch. of Sci. & Tech., Kanazawa Univ., 2.NanoMaRi, Kanazawa Univ.)

Keywords:thermoelectric conversion

The transverse thermoelectric effect, which produces an electric field in the direction of the cross product of the temperature gradient and magnetization of magnetic materials, has attracted much attention in recent years because of its potential applicability to a large area. Since MnBi₂Te₄ was predicted to have antiferromagnetic order in the interlayer and to be a ferrimagnetic semiconductor with quantized anomalous Hall conductivity in an odd number of three or more septuple layers, it is expected to generate a transverse thermoelectric effect. In this study, we performed first-principles calculations for ultrathin MnBi₂Te₄ films and examined estimating the coefficient representing the magnitude of the transverse thermoelectric effect and a dimensionless figure of merit.