[17p-PB07-1~15] 15.4 III-V-group nitride crystals

[17p-PB07-15] Evaluation of electrical characterization of Mg ion-implanted GaN single crystals by THz-TDSE

〇Dingding Wang¹, Hayato Watanabe¹, Takashi Fujii^1,3, Momoko Deura², Toshiyuki Iwamoto³, Atsushi Suyama⁴, Hitoshi Kawanowa⁴, Tsutomu Araki¹ (1.Col. of Sci. & Eng, Ritsumeikan Univ., 2.R-GIRO, 3.PNP, 4.Ion Technology Center Co., Ltd)

Keywords:ion implantation, THz-TDSE, GaN

The fabrication technology of p-type GaN implanted with Mg ions is extremely important for the development of devices using gallium nitride. However, it is difficult to form an electrode in the state where the protective film is deposited, and there are problems such as difficulty in obtaining ohmic contact even without the protective film. Therefore, we investigated whether it is possible to measure Mg ion implanted GaN samples with a protective film deposited using terahertz time-domain spectroscopic ellipsometry (THz-TDSE).