The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18a-A302-1~6] 6.3 Oxide electronics

Sat. Mar 18, 2023 10:00 AM - 11:30 AM A302 (Building No. 6)

Akira Sakai(Osaka Univ.)

10:00 AM - 10:15 AM

[18a-A302-1] Electrode Dependence of Thermally Stimulated Current in Sputtered Ta2O5

Guento Misawa1, Hisashi Shima1, Yasuhisa Naitoh1, Hiroyuki Akinaga1 (1.DTech-AIST)

Keywords:tantalum oxide, thermally stimulated current, electrode dependence

Tantalum oxide (Ta2O5) is a transition metal oxide that has been proposed for various uses such as variable resistance elements. Utilization of the quantitative evaluation of trap levels are tried for understanding the behavior and modeling as an electronic device.We are obtaining the trap depth from Thermally Stimulated Current (TSC) caused by photoexcitation.
As for electrode, instead of iridium, which shows digital change of resistance in a device, titanium nitride is used for the measurement.
We examine the electrode dependence of TSC on Ir and titan nitride which shows analog resistance change.