The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[18a-A302-1~6] 6.3 Oxide electronics

Sat. Mar 18, 2023 10:00 AM - 11:30 AM A302 (Building No. 6)

Akira Sakai(Osaka Univ.)

10:45 AM - 11:00 AM

[18a-A302-4] Effect of Au doped layer and Hf layer on resistance change behavior of HfO2 based ReRAM device

Masakazu Tanaka1, Chuanyang Huang1, Shinji Okayasu1, Tomohiro Shimizu1, Takeshi Ito1, Shoso Shingubara1 (1.Kansai Univ.)

Keywords:ReRAM

HfOx膜中にAu中間層を導入し、HfOx層に接して酸素スカベンジャー層としてHf層を設けたReRAMの抵抗変化挙動について比較、評価する。