[18a-A302-1~6] 6.3 Oxide electronics

▲ [18a-A302-6] Modulation of synaptic behavior in a 2-terminal protonic device through proton potential and applied voltage

〇SatyaPrakash Pati¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1.Kyushu Univ.)

Keywords:Protonic synaptic Devices, Electrical Control, Tungsten Oxide

Among ionic neuromorphic devices, proton-based devices are proved to be efficient in terms of low voltage operation due to their lowest ionic size. However, most of the work on protonic devices are conventionally 3-terminal type having a barrier layer whose operation voltage remains higher. In our earlier work, we reported a possible low voltage operation of a 2-terminal type protonic device, where transport of proton leads to conductance change up to several orders. In the present work, we demonstrate, not only the speed of protonation but also the delay time can be tuned by varying proton potential (hydrogen partial pressure). We also evaluated the voltage dependent speed and time constant which behaves similarly as the variation of proton potential.