[18a-A408-1~9] 8.3 Plasma nanotechnology

[18a-A408-6] Cross-sectional observation of insulating films on silicon derived from plasmonic plasma processes

〇Takeshi Kitajima¹, Kazuyasu Watanabe¹, Toshiki Nakano¹ (1.Nat. Def. Acad.)

Keywords:plasma, plasmon, dielectric film

High-quality insulating films can be formed at room temperature by the plasmonic plasma process, in which hot electrons supplied by gold nanoparticles are applied to plasma surface reactions. The in-plane uniformity of the insulating film and the formation status around the gold nanoparticles were evaluated by cross-sectional TEM, and the thickness uniformity of less than ±0.2 nm was confirmed in the in-plane range of more than 100 nm. It was also confirmed that a SiON film with a thickness of 2.9 nm was formed under the gold nanoparticles with a diameter of 8.4 nm with no fluctuation in thickness.