Improvement of planarity of InGaN using face to face annealing with NH<sub>3</sub>

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Sat. Mar 18, 2023 9:00 AM - 11:30 AM B401 (Building No. 2)

Shugo Nitta(Nagoya Univ.), Kohei Ueno(Univ. of Tokyo)

9:00 AM - 9:15 AM

〇Atsuto Nakata¹, Yuya Tawarazako¹, Ayano Sasaki¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Yamaguchi Univ.)

Keywords:InGaN