[18a-B401-1~9] 15.4 III-V-group nitride crystals

[18a-B401-6] Correlation between surface morphology and carbon incorporation in MOVPE growth of GaN on GaN substrate

〇Hirotaka Watanabe¹, Shugo Nitta¹, Takeru Kumabe², Seiya Kawasaki², Kazuki Ohnishi¹, Yoshio Honda¹, Hiroshi Amano^1,3,4 (1.Nagoya Univ. (NU) IMaSS, 2.Dept. of Electronics. NU, 3.NU VBL, 4.NU ARC)

Keywords:semiconductor, Metal Organic Chemical Vapor Epitaxy, Carrier concentration