The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[18a-D704-1~11] 10.2 Fundamental and exploratory device technologies for spin

Sat. Mar 18, 2023 9:00 AM - 12:00 PM D704 (Building No. 11)

Minori Goto(Osaka Univ.), Shinji Isogami(NIMS)

11:45 AM - 12:00 PM

[18a-D704-11] Current-induced domain-wall motion in synthetic antiferromagnets with antisymmetric interlayer exchange coupling

Hiroto Masuda1,2, Yuta Yamane3,4, Takeshi Seki1,5, Takaaki Dohi4, Takumi Yamazaki1, Rajkumar Modak5, Ken-ichi Uchida1,5, Jun'ichi Ieda6, Mathias Klaui7, Koki Takanashi1,6 (1.IMR, Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.FRIS, Tohoku Univ., 4.RIEC, Tohoku Univ., 5.NIMS, 6.ASRC, JAEA, 7.Institute of Physics, Johannes Gutenberg Univ. Mainz)

Keywords:Interlayer exchange coupling, Domain-wall motion, Spin-orbit torque

Recently, the antisymmetric interlayer exchange coupling (antisymmetric IEC) was observed in the interlayer exchange-coupled multilayers with perpendicular magnetic anisotropy when its in-plane spatial inversion symmetry is broken. The net in-plane antisymmetric IEC effective field can be coupled with other in-plane fields, resulting in the field-free spin-orbit torque switching. The antisymmetric IEC also stabilizes a chiral domain-wall structure, which may affect the current-induced domain-wall motion. Here, we demonstrate the current-induced domain-wall motion in the non-wedged and wedged Pt/Co/Ir/Co/Pt films and investigates the relation between domain-wall motion and the antisymmetric IEC. By introducing a wedged structure, the enhancement of domain-wall velocity is achieved.