[18a-D704-1~11] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [18a-D704-11] Current-induced domain-wall motion in synthetic antiferromagnets with antisymmetric interlayer exchange coupling

〇Hiroto Masuda^1,2、Yuta Yamane^3,4、Takeshi Seki^1,5、Takaaki Dohi⁴、Takumi Yamazaki¹、Rajkumar Modak⁵、Ken-ichi Uchida^1,5、Jun'ichi Ieda⁶、Mathias Klaui⁷、Koki Takanashi^1,6 (1.IMR, Tohoku Univ.、2.Grad. Sch. Eng., Tohoku Univ.、3.FRIS, Tohoku Univ.、4.RIEC, Tohoku Univ.、5.NIMS、6.ASRC, JAEA、7.Institute of Physics, Johannes Gutenberg Univ. Mainz)

キーワード：Interlayer exchange coupling, Domain-wall motion, Spin-orbit torque

Recently, the antisymmetric interlayer exchange coupling (antisymmetric IEC) was observed in the interlayer exchange-coupled multilayers with perpendicular magnetic anisotropy when its in-plane spatial inversion symmetry is broken. The net in-plane antisymmetric IEC effective field can be coupled with other in-plane fields, resulting in the field-free spin-orbit torque switching. The antisymmetric IEC also stabilizes a chiral domain-wall structure, which may affect the current-induced domain-wall motion. Here, we demonstrate the current-induced domain-wall motion in the non-wedged and wedged Pt/Co/Ir/Co/Pt films and investigates the relation between domain-wall motion and the antisymmetric IEC. By introducing a wedged structure, the enhancement of domain-wall velocity is achieved.