[18p-A202-1~8] CS.6 Code-sharing Session of 8.3 & 9.2 & 13.6

▲ [18p-A202-7] Integration of surface engineered silicon quantum dots in formamidinium lead iodide perovskite solar cells

〇Svrcek Vladimir¹, Calum McDonald¹, Dilli Babu Padmanaban², Ruairi McGlynn², Ankur Kambley², Bruno Alessi¹, Davide Mariotti², Takuya Matsui¹ (1.AIST Tsukuba, 2.Ulster University)

Keywords:surface engineered, Si quantum dots, perovskites

In this work we present details on the synthesis and characterization (e.g. SEM, EDS, UV-Vis) of FA lead iodide (FAPbI₃) stable thin films and single junction FAPbI₃ solar cells with the efficiencies exceeding > 19%. We show that a narrow-gap (E_g=1.54 eV) FAPbI₃ considerably enhances the short-circuit current density (J_SC) and does not compromise the V_OC, whereby V_OC ~1.1 eV; these values are in fact very similar to the V_OC of a triple-cation perovskite (Rb_0.05(FA_0.83MA_0.17)_0.95PbI_0.83Br_0.17) solar cell with wider E_g >1.6 eV. We further demonstrate that the integration of plasma surface engineered (SE) Si quantum dots (QDs) into FAPbI₃ absorber does not significantly change the material properties such as energy band gap, while exhibiting superior solar cell properties over long time durations ( >5 months). Our results indicate that the external quantum efficiency (EQE) of SE Si-QDs in FAPbI₃ cells remains superior after 5 months and the evaluated J_SC roughly correspond to those from the I–V curves.