[18p-B401-1~13] 15.4 III-V-group nitride crystals

[18p-B401-10] Improvement of electrical properties by optimizing the intermediate layer of N-polar AlGaN/AlGaN/AlN structures

〇Minagi Miyamoto¹, Matsumura Wataru¹, Okuno Ryo¹, Matsuda Shunsuke¹, Hanasaku Kouki¹, Kowaki Taketo¹, Inahara Daisuke¹, Kurai Satoshi¹, Okada Narihito¹, Yamada Youichi¹ (1.Yamaguchi Univ.)

Keywords:aluminum nitride (AlN), Aluminum Gallium Nitride