[18p-B401-1~13] 15.4 III-V-group nitride crystals

[18p-B401-12] Generation of 3-dimensional electron slab by formation of polarization doped
compositionally graded AlGaN structures

〇Masanobu Hiroki¹, Yoshitaka Taniyasu¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:AlN

The compositionally graded AlGaN layers generates high concentration of 3-dimensional electron slabs in it. However, there is a concern that two-dimensional Hall gas is induced at the interface when it is formed on the AlN buffer layer. We fabricated a band-offset-free structure with a compositionally graded AlGaN underlayer whose Al composition decreases. The electrical characteristics were revealed the formation of a 3-dimensional electron slab with high electron mobility of 390 cm²/Vs and electron concentration of 5.4 x 10¹⁷ cm^-3.