[18p-D519-1~15] 6.5 Surface Physics, Vacuum

△ [18p-D519-6] Growth and Structure of In Few-Atomic-Layer on Si(111)

〇Tomoka Murata¹, Kenta Kuroishi¹, Keisuke Yukawa¹, Shinichiro Hatta¹, Hiroshi Okuyama¹, Tetsuya Aruga¹ (1.Kyoto Univ.)

Keywords:ultrathin metal films, ARPES, LEED

We have studied the growth of few-layer In films on Si(111) by using low energy electron diffraction, scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. By the additional deposition of In on double-layer structure at 100 K, (11×11) and (√3×√3)R30° superstructures were found at 3.6 and >4.2 ML, respectively. Both superstructures are approximately in lattice matching with Si(111).