Special Issue: Control and Manipulation of Microstructure in Magnetic Materials for Functional Devices

[4-5A] Low Current Driven Vertical Domain Wall Motion Memory with Artificial Ferromagnet

〇Yu Min Hung¹, Tian Li¹, Ryusuke Hisatomi¹, Yoichi Shiota¹, Takahiro Moriyama¹, Teruo Ono¹ (1.Kyoto University)

※This presenter is a candidate for the Student Award for Outstanding Presentation.

Keywords:artificial ferromagnet, domain wall motion memory, exchange stiffness constant, perpendicular magnetic anisotropy, critical current