[1Dp01-13] TF/SE/EMP/MI/MS

[1Dp01S] Effects of a SrO buffer layer and in-situ post-annealing
on the quality of EuO epitaxial thin films on SrTiO₃ substrates

*Yoshihito Sano¹, Kenichi Kaminaga¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1. Tohoku Univ.)

Most of the semiconducting properties of EuO, a ferromagnetic semiconductor, are still unknown, and there are no reports of electrochemical measurements. In this study, Nb-doped SrTiO₃ (STO) single crystal substrate with electrical conductivity is employed. However, the thermal diffusion of oxygen from the STO substrate interface into the film during substrate heating prevents the high quality of EuO thin film. In this talk, we will discuss the effects of introducing SrO buffer layer and vacuum post-annealing on the fabrication of EuO thin films on STO substrates.