2021年日本表面真空学会学術講演会

Presentation information

Surface Engineering/Thin Film/Semiconductor/Magnetic, Electronic, and Photonic devices/Electronic Material Processing(SE/TF/EMP/MI/MS)

[2Ca07-13] TF/SE/EMP/MI/MS

Thu. Nov 4, 2021 10:00 AM - 12:00 PM Room C (Takamatsu)

Chair:

11:15 AM - 11:30 AM

[2Ca12] Modulation of Metal-Insulator Transition Properties in the strain-controlled VO2 micro sample

*Ai I. Osaka1, Rui Li1, Liliany N. Pamasi2, Ken Hattori2, Hidekazu Tanaka1, Azusa N. Hattori1 (1. SANKEN, Osaka University, 2. Graduate School of Science and Technology, NAIST)

VO2, which is a strongly correlated metal dioxide, has the potential to be fabricated as a thermal trigger because ofthe characteristics of metal-insulator transition (MIT) around the room temperature. In this research, in order to clarify the MIT behavior affected by the planarly confinement effect, the MIT process of VO2 micron structures was systematically studied, and the phenomenon of the phase transition temperature change depending on the confined VO2 structures size was found. As the sample size increases from 2 um to 10 um, the phase transition temperature shows a totally upward trend from 268 K ~ 277K to 276 K ~ 285K. This result implies that the transition temperature was converted by virtues of the spatial confinement.