2021年日本表面真空学会学術講演会

Presentation information

Surface Science(SS2) Chemical Property

[2Da03-14] SS2

Thu. Nov 4, 2021 9:00 AM - 12:00 PM Room D (Kotohira)

座長:寺澤 知潮(日本原子力研究開発機構)、山川 紘一郎(日本原子力研究開発機構)

9:45 AM - 10:15 AM

[2Da06] Surface reactions of 2D materials controlled by field-effect transistors

*Ryo Nouchi1,2 (1. Osaka Prefecture University, 2. Japan Science and Technology Agency)

Two-dimensional (2D) materials that can be obtained by exfoliation of layered crystals are very sensitive to surface phenomena owing to their ultimate thinness. Their ultrathin body enables us to control the entire body by means of a field-effect-transistor (FET) configuration because the gate electric field penetrates to the top-most surface. Thus, it is expected that surface phenomena are controllable by means of FETs with a channel of 2D materials. In this talk, among various gate-controlled surface phenomena, gate-controlled chemical reactions will be discussed based on chemical modification of an archetypal 2D material, graphene.