[2Ea03-14] LD/NS/NM

[2Ea04] Electron irradiation dependence in C₆₀ Pyrrolidine Tris Acid (CPTA)Thin Film

*Mihiro Takeuchi^1,2, Hiroshi Suga^1,2, Ying-Chiao WANG², Takatsugu Wakahara³, Kazuhito Tsukagoshi^2,1 (1. Chiba Institute of Technology, 2. WPI-MANA NIMS, 3. Research Center for Functional Materials NIMS)

In recent years, the resistive switch effect, which controls the polymerization and dissociation of fullerenes, has been reported in voltage-applied experiments using a scanning tunneling microscope, and its application to memory devices has been suggested. In this study, we fabricated a planar two-terminal structure using C60 pyrrolidine-trisacid (CPTA) thin film and electron beam lithography to design the device structure, and investigated its dependence on the electron irradiation region. In the CPTA thin film device, the change of the current in the electron beam irradiation region was confirmed.