[2P01-37] Poster

[2P10S] Atom switch by STM current on SrTiO₃(100)-√13×√13 surfaces

*Kyungmin Kim¹, Shiro Yamazaki², Daiki Katsube³, Hayato Yamashita¹, Masayuki Abe¹ (1. Graduate School of Engineering Science, Osaka University, 2. Department of Physics, School of Science, Tokyo Institute of Technology, 3. Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology)

Transition metal oxides show various kind of extreme physical phenomena because of complicated interaction among charge, spin and orbital degree of freedom. Especially, metallic interface state generated at interface between Perovskite oxide thin film SrTiO₃ and LaAlO₃ attracts a lot of interest as a next-generation oxide thin film device. Although, such extreme physical phenomena are very sensitive to atomic-scale structure and electronic structure at interface, it has been difficult to conduct research relating them precisely. Therefore, we firstly focused on SrTiO₃ substrate, and studied the atomic-scale structure and electronic state. In this process, we have found an atom switch on SrTiO₃ substrate, which is relatively rare on transition metal oxide substrate. By using atom switch as a probe of the surface, we will address the dynamic properties of SrTiO₃ substrate which have not been studied well so far.