Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport<br /><span style="color:#008000;">[Student presentation]</span>

Yang Yang

11:40 AM - 12:00 PM

[R1-S37-3] Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport
[Student presentation]

*Yang Yang¹, Katsuo Matsui¹, Yasuhiko Shimotsuma¹, Taishi Furuya², Reo Yamamoto², Toru Nagashima², Masahiro Shimizu¹, Kiyotaka Miura¹ (1. Kyoto University (Japan), 2. Tokuyama Corporation (Japan))

Keywords:Femtosecond laser processing, Wide-bandgap semiconductor, Laser-matter interaction

C000093

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Presentation information

Session 37: Ultra-short pulse laser processing 7 (New trend)

[R1-S37-3] Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport
[Student presentation]

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Presentation information

Session 37: Ultra-short pulse laser processing 7 (New trend)

[R1-S37-3] Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport[Student presentation]

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[R1-S37-3] Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport
[Student presentation]