Session 37: Ultra-short pulse laser processing 7 (New trend)

[R1-S37-3] Femtosecond laser slicing of single crystal AlN layer grown by Hydride Vapor Phase Epitaxy on an AlN substrate generated by Physical Vapor Transport
[Student presentation]

*Yang Yang¹, Katsuo Matsui¹, Yasuhiko Shimotsuma¹, Taishi Furuya², Reo Yamamoto², Toru Nagashima², Masahiro Shimizu¹, Kiyotaka Miura¹ (1. Kyoto University (Japan), 2. Tokuyama Corporation (Japan))

キーワード：Femtosecond laser processing, Wide-bandgap semiconductor, Laser-matter interaction

C000093