The 40th Annual Meeting of The Laser Society of Japan

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口頭講演

D: Laser processing

[D02-20p-V] 表面改質

Mon. Jan 20, 2020 3:15 PM - 5:30 PM meeting room 4-1 (exhibition wing)

座長:溝尻 瑞枝(長岡技術科学大学産学融合トップランナー養成センター)

5:00 PM - 5:15 PM

[D02-20p-V-08] レーザーアニール法による低温多結晶Si薄膜の特性改善と電気特性評価

○Fuminobu Hamano1, Kaname Imokawa1,2, Daisuke Nakamura1, Tetsuya Goto3, Hiroshi Ikenoue1,2 (1. Kyushu Univ., 2. Dept. of Gigaphoton, Kyushu Univ., 3. Tohoku Univ.)

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