*Antti Ranni¹, Fredrik Brange², Elsa Mannila², Axel Eriksson¹, Dmitry Golubev², Jukka Pekola², Christian Flindt², Ville Maisi¹ (1. NanoLund and Solid State Physics, Lund University, 2. Department of Applied Physics, Aalto University)

*Preden Roulleau¹, Myunglae Jo¹, Geneviève Fleury¹, Heung-Sun Sim², Thierry Jolicoeur⁵, Takasi Taniguchi⁴, Patrice Roche¹, Christian Glattli¹, Norio Kumada³ (1. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif sur Yvette Cedex France, 2. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea, 3. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan, 4. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, 5. IPHT, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif sur Yvette Cedex France)

Davis Chen¹, Suyang Cai¹, Nai-Wen Hsu², Shi-Hsien Huang², Yen Chuang², Erik Nielsen³, Jiun-Yun Li^2,4, Chih-Wen Liu², Tzu-Ming Lu³, *Dominique Laroche¹ (1. Department of Physics, University of Florida, 2. Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, 3. Sandia National Laboratories, 4. Taiwan Semiconductor Research Institute)

*Akira Oguri¹, Yoshimichi Teratani¹, Kazuhiko Tsutsumi¹, Rui Sakano² (1. Osaka City University, 2. Keio University)