*Anne Anthore¹, Hadrien Duprez⁴, Emilie Sivre, Abdelhanin Aassime², Antonella Cavanna³, Ulf Gennser³, Frederic Pierre³ (1. Paris City University, 2. Paris Saclay University, 3. CNRS, 4. ETH Zurich)

*Daan Wielens¹, Martijn Lankhorst¹, Tjerk Reintsema¹, Sietse Reintsema¹, Chuan Li¹, Alexander Brinkman¹ (1. University of Twente)

*Masayuki Hashisaka^1,2, Takuya Ito³, Takafumi Akiho¹, Satoshi Sasaki¹, Norio Kumada¹, Naokazu Shibata³, Koji Muraki¹ (1. NTT Basic Research Laboratories, 2. JST, PRESTO, 3. Tohoku University)

A C Keser^1,2, D Q Wang^1,2, O Klochan^3,2, D.Y.H. Ho⁴, O A Tkachenko⁵, V A Tkachenko^5,6, D Culcer^1,2, S Adam^4,7,8, I Farrer⁹, D A Ritchie¹⁰, *Alex Hamilton^1,2 (1. University of NSW, 2. ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Australia, 3. School of Science, University of New South Wales, Canberra, ACT 2612, Australia, 4. Yale-NUS College, 16 College Avenue West, 138614, Singapore, 5. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk, 630090, Russia, 6. Novosibirsk University, Novosibirsk, 630090, Russia, 7. Centre for Advanced 2D Materials and Graphene Research Centre, NUS, Singapore, 8. Department of Physics, Faculty of Science National University of Singapore, Singapore, 9. Dept of Electronic and Electrical Engineering, The University of Sheffield, United Kingdom, 10. Cavendish Laboratory, University of Cambridge, CB3 0HE, United Kingdom)