Carrier doping effect in quantum well of SrVO<sub>3</sub> grown by gas source molecular beam epitaxy

[P19-SF3B-30] Carrier doping effect in quantum well of SrVO₃ grown by gas source molecular beam epitaxy

*Kei S. Takahashi¹, Junya Iguchi², Yoshinori Tokura^2,3, Masashi Kawasaki^1,2 (1. RIKEN CEMS, 2. Univ. of Tokyo, 3. Tokyo College)

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