[PO-O1] Poster Session 1

[P1-82] Mechanochemistry induced atomic wear in chemical mechanical polishing processes

^○Jialin Wen, Tianbao Ma, Xinchun Lu (Dept. of Mechanical Engineering, Tsinghua Univ., China)

Chemical mechanical polishing (CMP) is widely applied in the semiconductor industry to achieve ultra-high precision manufacturing of surfaces (such as Si and Cu), however, its mechanisms remain elusive because of interaction between chemical effects (such as the chemical reactions with the existence of H₂O₂ and glycine) and mechanical effects (such as the tribology process). By using molecular dynamics simulations based on the ReaxFF reactive force field, we have explored the CMP mechanisms at the atomic level and have revealed the importance of mechanochemistry induced atomic wear during the CMP processes.