[SY-B5] Symposium B-5

[SY-B5] Development of defect mechanics-based multi-scale simulation techniques for reliability study of high performance electronic devices in radiation environments

^○Yukeun Eugene Pak¹, Youjung Seo², Dhaneshwar Mishra¹, Keonwook Kang³, Jihyun Kim⁴ (1.Advanced Institutes Convergence Technology, Korea, 2.Seoul National University, Korea, 3.Yonsei University, Korea, 4.Korea University , Korea)

GaN-based electronic devices are very attractive for space applications since their radiation hardness characteristics are superior to the Si-based devices. For space missions requiring very conservative design margins, the presence of fabrication-induced defects as well as the radiation-induced defects limit the utilization of space-borne electronics. Therefore, prediction models to understand the defect generation mechanisms and the radiation effects on GaN devices are needed to properly engineer the reliability of these devices for the radiation environment.

To this end, we developed the quantitative linear elasticity models that can predict the stresses and piezoelectric fields induced in multilayer quantum wells in the presence of lattice defects such as dislocations. These electroelastic field calculations are coupled with the quantum mechanical formulation to predict the electronic and optical behavior of GaN-based devices such as LEDs and high-electronic-mobility transistors(HEMTs). To characterize the radiation effects, molecular dynamics (MD) simulations were performed to study the formation mechanisms of point defects caused by the energy transfer from irradiated particles. The required parameters for MD simulations were obtained by the Monte Carlo (MC) simulation code, GEANT4, and the results are compared with the irradiation test results.