[SY-H9] Symposium H-9

[SY-H9] Theoretical approach for EUV resist fabrication: DFT-MD-FDM study

^○Muyoung Kim¹, Junghwan Moon¹, Joonmyung Choi³, Sungwoo Park¹, Byunghoon Lee³, Changyoung Jeong³, Maenghyo Cho^2,1 (1.Divison of Multiscale Mechanical Design, School of Mechanical and Aerospace Engineering, Seoul National University, Korea, 2.Institute of Advanced Machines and Design, Seoul National University, Korea, 3.SAMSUNG ELECTRONICS CO., LTD, Korea)

Size of wafer has been reduced for improving performance and productivity in semiconductor manufacturing industry, and Extreme Ultraviolet (EUV) light source is state of the art strategy to achieve the goal. Fabrication of photoresist pattern is one of the main procedures in EUV lithography, and critical problems (pattern bridging or pinching) deteriorate as downsizing its size. Even though experimental- and theoretical approaches have been reported to provide physical mechanism and solution of performance degradation, technical huddles originating from complex photochemistry (chemical reaction by electron attachment or diffusion of reactant) hinder the rigorous investigation. From this point of view, we constructed multiscale model having sequential theoretical framework of density functional theory (DFT)-molecular dynamics (MD)- finite difference method (FDM). Our newly-developed model provides full description of photo-triggered chemical reaction (acid activation by electron attachment and acid diffusion-deprotection evolution) and also quantification of sub-10 nm photoresist morphology in atomistic level. This achievement will be the cornerstone of theoretical research which facilitates fundamental understanding on important factors for EUV performance and rational design of the next-generation PR.