Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O3] Slot 03

Tue. Dec 14, 2021 9:00 AM - 11:00 AM Room A (G401)

Chair: Naoomi Yamada (Department of Applied Chemistry, Chubu University), Naoka NAGAMURA (National Institute for Materials Science, JAPAN)

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9:00 AM - 9:25 AM

[D2-O3-01 (Symposium Invited)] P-Type Copper Iodide Thin Films for Transparent Electronics

*Chang Yang¹, Michael Lorenz², Marius Grundmann² (1. East China Normal Univ. (China), 2. Univ. Leipzig (Germany))

9:25 AM - 9:40 AM

[D2-O3-02] Epitaxial Growth of p-Type SnO Films and Soft Chemical Sulfurization

*Suguri Uchida¹, Takuto Soma¹, Akira Ohtomo¹ (1. Tokyo Inst. of Tech. (Japan))

9:40 AM - 9:55 AM

[D2-O3-03] p-type conversion of n-type SnO_x thin-films by post-deposition N₂ annealing

*Kotaro Watanabe¹, Takuma Kawaguchi¹, Nao Wakabayashi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1. Kogakuin Univ. (Japan))

9:55 AM - 10:10 AM

[D2-O3-04] Hydrothermal synthesis of delafossite CuGaO₂ for photoanode applications

*Naoki Hayashi¹, Min Uk Choi¹, Tomokatsu Hayakawa¹ (1. Nagoya Inst. of Tech. (Japan))

Break (10:10 AM - 10:20 AM)

10:20 AM - 10:45 AM

[D2-O3-05 (Symposium Invited)] Reverse Monte Carlo of EXAFS data for materials characterization

*Fabio Iesari¹, Toshihiro Okajima¹, Andrea Di Cicco² (1. Aichi Synchrotron Radiation Center (Japan), 2. Univ. of Camerino (Italy))

10:45 AM - 11:00 AM

[D2-O3-06] In-Gap States of an Amorphous In-Ga-Zn-O Thin Film Studied via UV, Hard X-ray, and Inverse Photoemission Spectroscopies

*Ryotaro Nakazawa¹, Atsushi Matsuzaki¹, Kohei Shimizu¹, Shohei Tadano¹, Emi Kawashima², Mojtaba Adbi Jalebi³, Samuel D. Stranks⁴, Hiroyuki Yoshida¹, Peter Krüger¹, Satoshi Yasuno⁵, Hiroshi Tokairin², Yuya Tanaka¹, Hisao Ishii¹ (1. Chiba Univ. (Japan), 2. Idemitsu Kosan Co. Ltd. (Japan), 3. Univ. college London (UK), 4. Univ. of Cambrige (UK), 5. Japan Synchrotron Radiation Res. Inst. (Japan))

Session information

[D2-O3] Slot 03

[D2-O3-01 (Symposium Invited)] P-Type Copper Iodide Thin Films for Transparent Electronics

[D2-O3-02] Epitaxial Growth of p-Type SnO Films and Soft Chemical Sulfurization

[D2-O3-03] p-type conversion of n-type SnO_x thin-films by post-deposition N₂ annealing

[D2-O3-04] Hydrothermal synthesis of delafossite CuGaO₂ for photoanode applications

[D2-O3-05 (Symposium Invited)] Reverse Monte Carlo of EXAFS data for materials characterization

[D2-O3-06] In-Gap States of an Amorphous In-Ga-Zn-O Thin Film Studied via UV, Hard X-ray, and Inverse Photoemission Spectroscopies

Authentication

Session information

[D2-O3] Slot 03

[D2-O3-01 (Symposium Invited)] P-Type Copper Iodide Thin Films for Transparent Electronics

[D2-O3-02] Epitaxial Growth of p-Type SnO Films and Soft Chemical Sulfurization

[D2-O3-03] p-type conversion of n-type SnOx thin-films by post-deposition N2 annealing

[D2-O3-04] Hydrothermal synthesis of delafossite CuGaO2 for photoanode applications

[D2-O3-05 (Symposium Invited)] Reverse Monte Carlo of EXAFS data for materials characterization

[D2-O3-06] In-Gap States of an Amorphous In-Ga-Zn-O Thin Film Studied via UV, Hard X-ray, and Inverse Photoemission Spectroscopies

Authentication

[D2-O3-03] p-type conversion of n-type SnO_x thin-films by post-deposition N₂ annealing

[D2-O3-04] Hydrothermal synthesis of delafossite CuGaO₂ for photoanode applications