Poster Session

D. Frontiers of Advanced Electronic Materials » [D-3] Defect Functionalized Energy and Electronic Materials

[D3-PR13] Slot 13

Tue. Dec 14, 2021 2:00 PM - 3:30 PM D3-PR13 (G403-404)

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2:00 PM - 3:30 PM

[D3-PR13-01] High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides

*Shigeru Kimura¹, Akihiro Shiraishi¹, Xinyi He¹, Takayoshi 2 Katase¹, keisuke Ide¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1. Tokyo Institute of Technology (Japan))

2:00 PM - 3:30 PM

[D3-PR13-02] Efficient Exploration of Proton Sites in Metal Oxides

*Naoki Tsunoda¹, Yu Kumagai¹, Fumiyasu Oba¹ (1. Tokyo Inst. of Tech. (Japan))

2:00 PM - 3:30 PM

[D3-PR13-03] Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaO_x for Neuromorphic Computing

*Atsushi Tsurumaki-Fukuchi¹, Takayoshi Katase², Hiromichi Ohta³, Masashi Arita¹, Yasuo Takahashi¹ (1. Faculty of IST, Hokkaido Univ. (Japan), 2. MSL, Tokyo Tech. (Japan), 3. RIES, Hokkaido Univ. (Japan))

2:00 PM - 3:30 PM

[D3-PR13-04] Point Defects in CuMO₂ (M = Al, Ga, In): A First-Principles Study

*Tomoya Gake¹, Yu Kumagai¹, Akira Takahashi¹, Fumiyasu Oba¹ (1. Tokyo Inst. of Tech. (Japan))

2:00 PM - 3:30 PM

[D3-PR13-05] Fabrication and characterization of resistive random-access memory device using amorphous 12CaO• 7Al2O3

*Tasuke Kadono¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1. Tokyo Institute of Technology (Japan))

Session information

[D3-PR13] Slot 13

[D3-PR13-01] High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides

[D3-PR13-02] Efficient Exploration of Proton Sites in Metal Oxides

[D3-PR13-03] Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaO_x for Neuromorphic Computing

[D3-PR13-04] Point Defects in CuMO₂ (M = Al, Ga, In): A First-Principles Study

[D3-PR13-05] Fabrication and characterization of resistive random-access memory device using amorphous 12CaO• 7Al2O3

Authentication

Session information

[D3-PR13] Slot 13

[D3-PR13-01] High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides

[D3-PR13-02] Efficient Exploration of Proton Sites in Metal Oxides

[D3-PR13-03] Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaOx for Neuromorphic Computing

[D3-PR13-04] Point Defects in CuMO2 (M = Al, Ga, In): A First-Principles Study

[D3-PR13-05] Fabrication and characterization of resistive random-access memory device using amorphous 12CaO• 7Al2O3

Authentication

[D3-PR13-03] Probe Microscopy Analysis of Defect-Driven Analog Memory Functions of TaO_x for Neuromorphic Computing

[D3-PR13-04] Point Defects in CuMO₂ (M = Al, Ga, In): A First-Principles Study