Oral Session
D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications
Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room A (G401)
Chair: Keisuke Ide (Tokyo Institute of Technology), Nobuto Oka (Kindai University, JAPAN)
4:00 PM - 4:25 PM
*Vassilios D Binas1, George Kiriakidis1 (1. Materials Research Univ. (Greece))
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4:25 PM - 4:40 PM
*Keiji Tsubaki1, Atsushi Tsurumaki-Fukuchi1, Yasuo Takahashi1, Takayoshi Katase2, Toshio Kamiya2, Masashi Arita1 (1. IST, Hokkaido Univ. (Japan), 2. MSL, Tokyo Tech. (Japan))
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4:40 PM - 4:55 PM
Ai I. Osaka1, Daisetsu Toh2, Kazuto Yamauchi2, Ken Hattori3, Xiaoqian Shi4, Fangzhun Guo4, *Azusa N. Hattori1 (1. ISIR, Osaka Univ. (Japan), 2. Eng., Osaka Univ. (Japan), 3. NAIST (Japan), 4. Dalian Jiaotong Univ. (China))
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4:55 PM - 5:10 PM
*Shingo Genchi1, Ai I. Osaka1, Azusa N. Hattori1, Kenji Watanabe2, Takashi Taniguchi2, Hidekazu Tanaka1 (1. Osaka Univ. (Japan), 2. NIMS (Japan))
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5:10 PM - 5:25 PM
*Hirokazu Nitta1, Antoine Fleurence1, Yukiko Yamada-Takamura1, Taisuke Ozaki2 (1. Japan Advanced Institute of Science and Technology (Japan), 2. Institute for Solid State Physics, The Univ. of Tokyo (Japan))
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Closing Remark (5:25 PM - 5:35 PM)
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