Materials Research Meeting 2021

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Oral Session

A. New Materials Methodology for Next-Generation » [A-1] STAM Methods: Leading-Edge Methods for New Materials

[A1-O4] Slot 04

Tue. Dec 14, 2021 1:30 PM - 3:30 PM Room A (G401)

Chair: Yukari Katsura (National Institute for Materials Science), Tomofumi Tada (Kyushu University)

1:40 PM - 2:00 PM

[A1-O4-01(Symposium Invited)] Large-diameter SiC crystal grown by solution growth using surrogate model

*Toru UJIHARA1 (1. Nagoya Univ. (Japan))

Keywords:Machine Learning, Surrogate Model, Optimization, SiC, Crystal Growth

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