Precise analysis of segregation sites for As dopants at Si grain boundaries

Yutaka Ohno

Presentation information

Oral Session

A. New Materials Methodology for Next-Generation » [A-4] New Methodology for Developing Innovative Materials

[A4-O3] Slot 03

Tue. Dec 14, 2021 9:00 AM - 11:00 AM Room E (G416+417)

Chair: Michiko Kusunoki (Nagoya University)

10:00 AM - 10:20 AM

[A4-O3-04] Precise analysis of segregation sites for As dopants at Si grain boundaries

*Yutaka Ohno¹, Tatsuya Yokoi², Yasuo Shimizu^1,5, Jie Ren¹, Koji Inoue¹, Yasuyoshi Nagai¹, Kentaro Kutsukake³, Kozo Fujiwara¹, Atsutomo Nakamura^2,4, Katsuyuki Matsunaga², Hideto Yoshida⁴ (1. Tohoku Univ. (Japan), 2. Nagoya Univ. (Japan), 3. RIKEN (Japan), 4. Osaka Univ. (Japan), 5. NIMS (Japan))

Keywords:Grain boundary segregation, atom probe tomography, ab initio calculation, silicon, arsenic

Please log in with your participant account.
» Participant Log In