Increased electrical conduction in anti-ThCr2Si2-type La2O2Bi with Bi square net via oxygen intercalation and hole doping

Kota Matsumoto

講演情報

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O1] D2-O1 / Slot 01

2021年12月13日(月) 09:00 〜 11:00 Room A (G401)

Chair: Yuzo Shigesato (Aoyama Gakuin University, JAPAN), Nobuto Oka (Kindai University, JAPAN)

10:05 〜 10:20

[D2-O1-03] Increased electrical conduction in anti-ThCr₂Si₂-type La₂O₂Bi with Bi square net via oxygen intercalation and hole doping

*Kota Matsumoto¹, Hideyuki Kawasoko¹, Tomoteru Fukumura^1,2 (1. Tohoku Univ. (Japan), 2. WPI-AIMR and Core Res. Cluster (Japan))

キーワード：Bi square net, high hole mobility, oxygen intercalation, hole doping

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講演情報

[D2-O1] D2-O1 / Slot 01

[D2-O1-03] Increased electrical conduction in anti-ThCr2Si2-type La2O2Bi with Bi square net via oxygen intercalation and hole doping

[D2-O1-03] Increased electrical conduction in anti-ThCr₂Si₂-type La₂O₂Bi with Bi square net via oxygen intercalation and hole doping