Two-Step Current-Induced Transition in Ca<sub>2</sub>RuO<sub>4</sub> Thin Films Observed in the Time-Resolved Resistive Switching Characteristics

Keiji Tsubaki

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O10] Slot 10

Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room A (G401)

Chair: Keisuke Ide (Tokyo Institute of Technology), Nobuto Oka (Kindai University, JAPAN)

4:25 PM - 4:40 PM

[D2-O10-02] Two-Step Current-Induced Transition in Ca₂RuO₄ Thin Films Observed in the Time-Resolved Resistive Switching Characteristics

*Keiji Tsubaki¹, Atsushi Tsurumaki-Fukuchi¹, Yasuo Takahashi¹, Takayoshi Katase², Toshio Kamiya², Masashi Arita¹ (1. IST, Hokkaido Univ. (Japan), 2. MSL, Tokyo Tech. (Japan))

Keywords:Current-induced transition, Metal-insulator transition, Ruthenium oxide, Resistive switching

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Presentation information

[D2-O10] Slot 10

[D2-O10-02] Two-Step Current-Induced Transition in Ca2RuO4 Thin Films Observed in the Time-Resolved Resistive Switching Characteristics

[D2-O10-02] Two-Step Current-Induced Transition in Ca₂RuO₄ Thin Films Observed in the Time-Resolved Resistive Switching Characteristics