In-Gap States of an Amorphous In-Ga-Zn-O Thin Film Studied via UV, Hard X-ray, and Inverse Photoemission Spectroscopies

Ryotaro Nakazawa

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O3] Slot 03

Tue. Dec 14, 2021 9:00 AM - 11:00 AM Room A (G401)

Chair: Naoomi Yamada (Department of Applied Chemistry, Chubu University), Naoka NAGAMURA (National Institute for Materials Science, JAPAN)

10:45 AM - 11:00 AM

[D2-O3-06] In-Gap States of an Amorphous In-Ga-Zn-O Thin Film Studied via UV, Hard X-ray, and Inverse Photoemission Spectroscopies

*Ryotaro Nakazawa¹, Atsushi Matsuzaki¹, Kohei Shimizu¹, Shohei Tadano¹, Emi Kawashima², Mojtaba Adbi Jalebi³, Samuel D. Stranks⁴, Hiroyuki Yoshida¹, Peter Krüger¹, Satoshi Yasuno⁵, Hiroshi Tokairin², Yuya Tanaka¹, Hisao Ishii¹ (1. Chiba Univ. (Japan), 2. Idemitsu Kosan Co. Ltd. (Japan), 3. Univ. college London (UK), 4. Univ. of Cambrige (UK), 5. Japan Synchrotron Radiation Res. Inst. (Japan))

Keywords:a-IGZO, HS-UPS, HAX-PES, LEIPS, In-gap states

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