Why do the HfO<sub>2</sub>-based ferroelectric thin films show unique properties? - Negative Capacitance, Wake-up Process and Time-dependent Imprint -

Norifumi Fujimura

講演情報

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O6] Slot 06

2021年12月15日(水) 09:00 〜 11:00 Room A (G401)

Chair: Akira Chikamatsu (The University of Tokyo), Kohei Fujiwara (Tohoku University, JAPAN)

09:55 〜 10:20

[D2-O6-04 (Symposium Invited)] Why do the HfO₂-based ferroelectric thin films show unique properties? - Negative Capacitance, Wake-up Process and Time-dependent Imprint -

*Norifumi Fujimura¹ (1. Osaka Prefecture University (Japan))

キーワード：HfO2, Ferroelectrics, negative capacitance, Wake-up, imprint

要旨・抄録、PDFの閲覧には参加者用アカウントでのログインが必要です。参加者ログイン後に閲覧・ダウンロードできます。
» 参加者用ログイン

講演情報

[D2-O6] Slot 06

[D2-O6-04 (Symposium Invited)] Why do the HfO2-based ferroelectric thin films show unique properties? - Negative Capacitance, Wake-up Process and Time-dependent Imprint -

[D2-O6-04 (Symposium Invited)] Why do the HfO₂-based ferroelectric thin films show unique properties? - Negative Capacitance, Wake-up Process and Time-dependent Imprint -