Oxygen vacancy generation in CaF2-doped In2O3 transparent conductive film in terms of bond-dissociation energy

Kaito Oe

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Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O8] Slot 08

2021年12月16日(木) 09:00 〜 12:00 Room A (G401)

Chair: Hiroshi Yanagi (University of Yamanashi, JAPAN), Hui Ye (College of Optical Science and Engineering, Zhejiang University, China)

09:40 〜 09:55

[D2-O8-02] Oxygen vacancy generation in CaF₂-doped In₂O₃ transparent conductive film in terms of bond-dissociation energy

*Kaito Oe¹, Shun Mori¹, Kotaro Watanabe¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aiwaka¹ (1. Kogakuin.Univ. (Japan))

キーワード：Transparent conductive films, In2O3-based materials, anion doping, CaF2, bond-dissociation energy

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[D2-O8] Slot 08

[D2-O8-02] Oxygen vacancy generation in CaF2-doped In2O3 transparent conductive film in terms of bond-dissociation energy

[D2-O8-02] Oxygen vacancy generation in CaF₂-doped In₂O₃ transparent conductive film in terms of bond-dissociation energy