Synthesis and characterization of oxysilicides and oxygermanides in search for semiconductors with direct-transition-type band gaps in near infrared region

Naoki Ohashi

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-O8] Slot 08

Thu. Dec 16, 2021 9:00 AM - 12:00 PM Room A (G401)

Chair: Hiroshi Yanagi (University of Yamanashi, JAPAN), Hui Ye (College of Optical Science and Engineering, Zhejiang University, China)

10:50 AM - 11:05 AM

[D2-O8-05] Synthesis and characterization of oxysilicides and oxygermanides in search for semiconductors with direct-transition-type band gaps in near infrared region

*Naoki Ohashi^1,2, David Mora–Fonz³, Shigeki Otani¹, Yoshiki Wada¹, Takeshi Ohgaki¹, Masashi Miyakawa¹, Alexander Shluger³ (1. Natl. Inst. Mat. Sci. (Japan), 2. Tokyo Inst. Tech. (Japan), 3. Univ. Coll. London (UK))

Keywords:Oxysilisides, Oxygermanides, Semiconductor, Luminescence, Band Structure, Near Infrared

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