Preparation of Ga-doped ZnO/BiFeO<sub>3</sub> Layered Thin Films and Their Photocurrent Properties

Naoki Okada

Presentation information

Poster Session

D. Frontiers of Advanced Electronic Materials » [D-2] Frontier in Functional Oxides and Related Materials: from Materials Design to Device Applications

[D2-PR14] Slot 14

Tue. Dec 14, 2021 4:00 PM - 6:00 PM D2-PR14 (G403-404)

4:00 PM - 6:00 PM

[D2-PR14-27] Preparation of Ga-doped ZnO/BiFeO₃ Layered Thin Films and Their Photocurrent Properties

*Naoki Okada¹, Wataru Sakamoto¹ (1. Chubu Univ. (Japan))

Keywords:BiFeO3, Thin film, Photocurrent properties, ZnO, Layered structure

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Presentation information

[D2-PR14] Slot 14

[D2-PR14-27] Preparation of Ga-doped ZnO/BiFeO3 Layered Thin Films and Their Photocurrent Properties

[D2-PR14-27] Preparation of Ga-doped ZnO/BiFeO₃ Layered Thin Films and Their Photocurrent Properties