[D2-PR14] Slot 14

[D2-PR14-47] Magneto-transport properties in Mn_4-xNi_xN suitable for domain wall motion devices and the origins of its large anomalous Hall effect

*Taro Komori^1,2, Haruka Mitarai¹, Tomohiro Yasuda¹, Kaoru Toko¹, Shuta Honda³, Takashi Suemasu¹ (1. Inst. Appl. Phys. Univ. Tsukuba (Japan), 2. JSPS (Japan), 3. Kansai Univ. (Japan))

Keywords:spintronics, domain wall motion, non-volatile memory, anomalous Hall effect, DFT calculation