Isovalent hole doping in p-type copper iodide semiconductor for earth abundant hole transport layers

Kosuke Matsuzaki

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-3] Defect Functionalized Energy and Electronic Materials

[D3-O10] Slot 10

Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room M (G312+313)

Chair: Toshio Kamiya (Tokyo Tech), David Scanlon (UCL)

4:45 PM - 5:00 PM

[D3-O10-03] Isovalent hole doping in p-type copper iodide semiconductor for earth abundant hole transport layers

*Kosuke Matsuzaki^1,2, Yaluhn Tang³, Naoki Tsunoda², Yu Kumagai², Kenji Nomura³, Fumiyasu Oba², Hideo Hosono² (1. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 2. Tokyo Inst. of Tech. (Japan), 3. Univ. of California, San Diego (United States of America))

Keywords:hole doping, defect complex, hole transport material

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