Materials Research Meeting 2021

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-3] Defect Functionalized Energy and Electronic Materials

[D3-O10] Slot 10

Thu. Dec 16, 2021 4:00 PM - 6:00 PM Room M (G312+313)

Chair: Toshio Kamiya (Tokyo Tech), David Scanlon (UCL)

4:45 PM - 5:00 PM

[D3-O10-03] Isovalent hole doping in p-type copper iodide semiconductor for earth abundant hole transport layers

*Kosuke Matsuzaki1,2, Yaluhn Tang3, Naoki Tsunoda2, Yu Kumagai2, Kenji Nomura3, Fumiyasu Oba2, Hideo Hosono2 (1. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 2. Tokyo Inst. of Tech. (Japan), 3. Univ. of California, San Diego (United States of America))

Keywords:hole doping, defect complex, hole transport material

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