[D3-O10] Slot 10

[D3-O10-03] Isovalent hole doping in p-type copper iodide semiconductor for earth abundant hole transport layers

*Kosuke Matsuzaki^1,2, Yaluhn Tang³, Naoki Tsunoda², Yu Kumagai², Kenji Nomura³, Fumiyasu Oba², Hideo Hosono² (1. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 2. Tokyo Inst. of Tech. (Japan), 3. Univ. of California, San Diego (United States of America))

キーワード：hole doping, defect complex, hole transport material