Fabrication and characterization of resistive random-access memory device using amorphous 12CaO• 7Al2O3

Presentation information

Poster Session

D. Frontiers of Advanced Electronic Materials » [D-3] Defect Functionalized Energy and Electronic Materials

Tue. Dec 14, 2021 2:00 PM - 3:30 PM D3-PR13 (G403-404)

2:00 PM - 3:30 PM

*Tasuke Kadono¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu¹, Hideo Hosono¹, Toshio Kamiya¹ (1. Tokyo Institute of Technology (Japan))

Keywords:Amorphous oxide, resistive random-access memory, C12A7

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