Materials Research Meeting 2021

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-4] Synchrotron Radiation Based Materials Research: Present and the Future

[D4-O6] Slot 06

Wed. Dec 15, 2021 9:00 AM - 11:00 AM Room E (G416+417)

Chair: Osami Sakata (Japan Synchrotron Radiation Research Institute)

10:10 AM - 10:30 AM

[D4-O6-04] Effect of Impurity Hydrogen on the Electronic and Atomic-scale Structure of Amorphous In-Ga-Zn-O Thin Films

*Rosantha Kumara1, Kyohei Ishikawa2, Keisuke Ide2, Hideo Hosono2, Toshio Kamiya2, Osami Sakata1,2,3 (1. Japan Synchrotron Radiation Research Inst. (Japan), 2. Tokyo Institute of Tech. (Japan), 3. National Institute for Materials Sci. (Japan))

Keywords:Amorphous oxide semiconductors, Thin-film transistors, High-energy X-ray diffraction, X-ray absorption fine structure spectroscopy, Reverse Monte Carlo modeling

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