[D4-O6] Slot 06

[D4-O6-04] Effect of Impurity Hydrogen on the Electronic and Atomic-scale Structure of Amorphous In-Ga-Zn-O Thin Films

*Rosantha Kumara¹, Kyohei Ishikawa², Keisuke Ide², Hideo Hosono², Toshio Kamiya², Osami Sakata^1,2,3 (1. Japan Synchrotron Radiation Research Inst. (Japan), 2. Tokyo Institute of Tech. (Japan), 3. National Institute for Materials Sci. (Japan))

キーワード：Amorphous oxide semiconductors, Thin-film transistors, High-energy X-ray diffraction, X-ray absorption fine structure spectroscopy, Reverse Monte Carlo modeling