Single germanene phase formed by segregation through Al(111) thin films on Ge(111)

Junji Yuhara

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-5] Properties and Characterizations of Functional Surfaces and Interfaces

[D5-O9] Slot 09

Thu. Dec 16, 2021 1:30 PM - 3:30 PM Room O (G316)

Chair: Shigenori Ueda (National Institute for Materials Science), Yutaka Majima (Tokyo Institute of Technology)

2:15 PM - 2:30 PM

[D5-O9-03] Single germanene phase formed by segregation through Al(111) thin films on Ge(111)

*Junji Yuhara¹, Hiroaki Muto¹, Masaaki Araidai¹, Masato Kobayashi¹, Akio Ohta¹, Seiichi Miyazaki¹, Sho-ichi Takakura², Masashi Nakatake², Guy Le Lay³ (1. Nagoya University (Japan), 2. Aichi Synchrotron Radiation Center (Japan), 3. Aix-Marseille Université (France))

Keywords:Germanene, Atomic segregation epitaxy, Al(111)

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