N2/SiH4 flow rate ratio dependence of nanoparticle incorporation in SiNx films deposited by plasma CVD

Masaharu Shiratani

講演情報

Oral Session

H. Innovative Materials Processing for Sustainable Society » [H-2] Plasma-Based Synthesis, Processing and Characterization of Materials for Energy and Environment

[H2-O10] Slot 10

2021年12月16日(木) 16:00 〜 18:00 Room E (G416+417)

Chair: Giichiro Uchida

17:30 〜 17:45

[H2-O10-06] N₂/SiH₄ flow rate ratio dependence of nanoparticle incorporation in SiN_x films deposited by plasma CVD

*Masaharu Shiratani¹, Yusuke Sasaki¹, Kunihiro Kamataki¹, Naho Itagaki¹, Kazunori Koga¹ (1. Kyushu Univ. (Japan))

キーワード：plasma CVD, SiNx film, nanoparticle

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講演情報

[H2-O10] Slot 10

[H2-O10-06] N2/SiH4 flow rate ratio dependence of nanoparticle incorporation in SiNx films deposited by plasma CVD

[H2-O10-06] N₂/SiH₄ flow rate ratio dependence of nanoparticle incorporation in SiN_x films deposited by plasma CVD